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Researcher profile

A. G. Swartz

A. G. Swartz contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Trust 21 - EmergingVerification L1Unclaimed author
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Published work

6 published item(s)

preprint2010arXiv

Epitaxial EuO Thin Films on GaAs

We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57°, a significant remanent magnetization, and a Curie temperature of 69 K.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Manipulation of Spin Transport in Graphene by Surface Chemical Doping

The effects of surface chemical doping on spin transport in graphene are investigated by performing non-local measurements in ultrahigh vacuum while depositing gold adsorbates. We demonstrate manipulation of the gate-dependent non-local spin signal as a function of gold coverage. We discover that charged impurity scattering is not the dominant mechanism for spin relaxation in graphene, despite its importance for momentum scattering. Finally, unexpected enhancements of the spin lifetime illustrate the complex nature of spin relaxation in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Oscillatory Spin Polarization and Magneto-Optic Kerr Effect in Fe3O4 Thin Films on GaAs(001)

The spin dependent properties of epitaxial Fe3O4 thin films on GaAs(001) are studied by the ferromagnetic proximity polarization (FPP) effect and magneto-optic Kerr effect (MOKE). Both FPP and MOKE show oscillations with respect to Fe3O4 film thickness, and the oscillations are large enough to induce repeated sign reversals. We attribute the oscillatory behavior to spin-polarized quantum well states forming in the Fe3O4 film. Quantum confinement of the t2g states near the Fermi level provides an explanation for the similar thickness dependences of the FPP and MOKE oscillations.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tailoring Interlayer Exchange Coupling of Ferromagnetic Films Across MgO with Fe Nanoclusters

We investigate the interlayer exchange coupling in Fe/MgO/Fe and Fe/MgO/Co systems with magnetic Fe nanoclusters embedded in the MgO spacer. Samples are grown by molecular beam epitaxy (MBE) and utilize wedged MgO films to independently vary the film thickness and the position of the Fe nanoclusters. Depending on the position of the Fe nanoclusters, the bilinear coupling (J1) exhibits strong variations in magnitude and can even switch between antiferromagnetic and ferromagnetic. This effect is explained by the magnetic coupling between the ferromagnetic films and the magnetic nanoclusters. Interestingly, the coupling of Fe nanoclusters to a Co film is 160% stronger than their coupling to a Fe film (at MgO spacing of 0.56 nm). This is much greater than the coupling difference of 20% observed in the analogous thin film systems (i.e. Fe/MgO/Co vs. Fe/MgO/Fe), identifying an interesting nano-scaling effect related to the coupling between films and nanoclusters.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tunneling Spin Injection into Single Layer Graphene

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance (ΔRNL) of 130 Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔRNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A non-local magnetoresistance (ΔRNL) of 130 Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔRNL vs. SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

0 citations0 reviewsNo code linkedOpen access