Researcher profile

A. G. Moghaddam

A. G. Moghaddam contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2021arXiv

Strongly anisotropic spin dynamics in magnetic topological insulators

The recent discovery of magnetic topological insulators has opened new avenues to explore exotic states of matter that can emerge from the interplay between topological electronic states and magnetic degrees of freedom, be it ordered or strongly fluctuating. Motivated by the effects that the dynamics of the magnetic moments can have on the topological surface states, we investigate the magnetic fluctuations across the (MnBi$_{\text{2}}$Te$_{\text{4}}$)(Bi$_{\text{2}}$Te$_{\text{3}}$)$_{\text{n}}$ family. Our paramagnetic electron spin resonance experiments reveal contrasting Mn spin dynamics in different compounds, which manifests in a strongly anisotropic Mn spin relaxation in MnBi$_{\text{2}}$Te$_{\text{4}}$ while being almost isotropic in MnBi$_{\text{4}}$Te$_{\text{7}}$. Our density-functional calculations explain these striking observations in terms of the sensitivity of the local electronic structure to the Mn spin-orientation, and indicate that the anisotropy of the magnetic fluctuations can be controlled by the carrier density, which may directly affect the electronic topological surface states.

preprint2014arXiv

Exporting superconductivity across the gap: Proximity effect for semiconductor valence-band states due to contact with a simple-metal superconductor

The proximity effect refers to the phenomenon whereby superconducting properties are induced in a normal conductor that is in contact with an intrinsically superconducting material. In particular, the combination of nano-structured semiconductors with bulk superconductors is of interest because these systems can host unconventional electronic excitations such as Majorana fermions when the semiconductor's charge carriers are subject to a large spin-orbit coupling. The latter requirement generally favors the use of hole-doped semiconductors. On the other hand, basic symmetry considerations imply that states from typical simple-metal superconductors will predominantly couple to a semiconductor's conduction-band states and, therefore, in the first instance generate a proximity effect for band electrons rather than holes. In this article, we show how the superconducting correlations in the conduction band are transferred also to hole states in the valence band by virtue of inter-band coupling. A general theory of the superconducting proximity effect for bulk and low-dimensional hole systems is presented. The interplay of inter-band coupling and quantum confinement is found to result in unusual wave-vector dependencies of the induced superconducting gap parameters. One particularly appealing consequence is the density tunability of the proximity effect in hole quantum wells and nanowires, which creates new possibilities for manipulating the transition to nontrivial topological phases in these systems.

preprint2013arXiv

Boltzmann conductivity of ferromagnetic graphene with magnetic impurities

We investigate the electrical conductivity of spin-polarized graphene in the presence of short-ranged magnetic scatterers within the relaxation time approximation and the semi-classical Boltzmann approach. Spin-flip scattering of the itinerant electrons from the majority spin sub-band into the minority one results in a minimum in the electrical resistivity at a finite temperature. While this behavior is reminiscent of the renowned Kondo effect, it has an entirely different origin and differs from the Kondo effect in several aspects. In particular, unlike the Kondo effect, this is a single particle phenomena, and it does not require antiferromagnetic coupling between the magnetic moments of impurities and spins of the itinerant electrons.