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A. G. Huibers

A. G. Huibers appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.str-el

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preprint1999arXiv

Low-Temperature Saturation of the Dephasing Time and Effects of Microwave Radiation on Open Quantum Dots

The dephasing time of electrons in open semiconductor quantum dots, measured using ballistic weak localization, is found to saturate below ~ 100 mK, roughly twice the electron base temperature, independent of dot size. Microwave radiation deliberately coupled to the dots affects quantum interference indistinguishably from elevated temperature, suggesting that direct dephasing due to radiation is not the cause of the observed saturation. Coulomb blockade measurements show that the applied microwaves create sufficient source drain voltages to account for dephasing due to Joule heating.

preprint1998arXiv

Distributions of the Conductance and its Parametric Derivatives in Quantum Dots

Full distributions of conductance through quantum dots with single-mode leads are reported for both broken and unbroken time-reversal symmetry. Distributions are nongaussian and agree well with random matrix theory calculations that account for a finite dephasing time, $τ_ϕ$, once broadening due to finite temperature $T$ is also included. Full distributions of the derivatives of conductance with respect to gate voltage $P(dg/dV_g)$ are also investigated.

preprint1997arXiv

Quantum Chaos in Open versus Closed Quantum Dots: Signatures of Interacting Particles

This paper reviews recent studies of mesoscopic fluctuations in transport through ballistic quantum dots, emphasizing differences between conduction through open dots and tunneling through nearly isolated dots. Both the open dots and the tunnel-contacted dots show random, repeatable conductance fluctuations with universal statistical proper-ties that are accurately characterized by a variety of theoretical models including random matrix theory, semiclassical methods and nonlinear sigma model calculations. We apply these results in open dots to extract the dephasing rate of electrons within the dot. In the tunneling regime, electron interaction dominates transport since the tunneling of a single electron onto a small dot may be sufficiently energetically costly (due to the small capacitance) that conduction is suppressed altogether. How interactions combine with quantum interference are best seen in this regime.