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A. Fête

A. Fête appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-scicond-mat.supr-con

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Published work

7 published item(s)

preprint2016arXiv

Ionic liquid gating of ultra-thinYBa$_2$Cu$_3$O$_{7-x}$ films

In this paper, we present a detailed investigation of the self-field transport properties of an ionic liquid gated ultra-thin YBa$_2$Cu$_3$O$_{7-x}$ film. From the high temperature dynamic of the resistivity ($> 220 \textrm{ K}$) different scenarios pertaining to the interaction between the liquid and the thin film are proposed. From the low temperature evolution of $J_{\textrm{c}}$ and $T_{\textrm{c}}$ a comparison between the behavior of our system and the standard properties of YBCO is drawn.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Giant Oscillating Thermopower at Oxide Interfaces

Understanding the nature of charge carriers at the LaAlO3/SrTiO3 interface is one of the major open issues in the full comprehension of the charge confinement phenomenon in oxide heterostructures. Here, we investigate thermopower to study the electronic structure in LaAlO3/SrTiO3 at low temperature as a function of gate field. In particular, under large negative gate voltage, corresponding to the strongly depleted charge density regime, thermopower displays record-high negative values of the order of 10^4 - 10^5 microV/K, oscillating at regular intervals as a function of the gate voltage. The huge thermopower magnitude can be attributed to the phonon-drag contribution, while the oscillations map the progressive depletion and the Fermi level descent across a dense array of localized states lying at the bottom of the Ti 3d conduction band. This study is the first direct evidence of a localized Anderson tail in the two-dimensional (2D) electron liquid at the LaAlO3/SrTiO3 interface.

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preprint2015arXiv

Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface

We have studied the electronic properties of the 2D electron liquid present at the LaAlO$_3$/SrTiO$_3$ interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650°C exhibit the highest low temperature mobility ($\approx 10000 \textrm{ cm}^2/\textrm{Vs}$) and the lowest sheet carrier density ($\approx 5\times 10^{12} \textrm{ cm}^{-2}$). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900°C) display carrier densities in the range of $\approx 2-5 \times 10^{13} \textrm{ cm}^{-2}$ and mobilities of $\approx 1000 \textrm{ cm}^2/\textrm{Vs}$ at 4K. Reducing their carrier density by field effect to $8\times 10^{12} \textrm{ cm}^{-2}$ lowers their mobilites to $\approx 50 \textrm{ cm}^2/\textrm{Vs}$ bringing the conductance to the weak-localization regime.

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preprint2015arXiv

Weak-localization and spin-orbit interaction in side-gate field effect devices at the LaAlO$_3$/SrTiO$_3$ interface

Using field effect devices with side gates, we modulate the 2 dimensional electron gas hosted at the LaAlO$_3$/SrTiO$_3$ interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals different transport regimes depending on the interplay between the different (elastic, inelastic, and spin-orbit) scattering times and their temperature dependencies. We find that the spin-orbit interaction strongly affects the low temperature transport in the normal state in a very large region of the phase diagram, extending beyond the superconducting dome.

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preprint2014arXiv

Large modulation of the Shubnikov-de Haas oscillations by the Rashba interaction at the LaAlO$_{3}$/SrTiO$_{3}$ interface

We investigate the 2-dimensional Fermi surface of high-mobility LaAlO$_3$/SrTiO$_3$ interfaces using Shubnikov-de Haas oscillations. Our analysis of the oscillation pattern underscores the key role played by the Rashba spin-orbit interaction brought about by the breaking of inversion symmetry, as well as the dominant contribution of the heavy $d_{xz}$/$d_{yz}$ orbitals on electrical transport. We furthermore bring into light the complex evolution of the oscillations with the carrier density, which is tuned by the field effect.

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preprint2012arXiv

Rashba induced magnetoconductance oscillations in the LaAlO3-SrTiO3 heterostructure

We report measurements of the normal state in-plane magnetoconductance in gated LaAlO$_3$-SrTiO$_3$ samples. As the orientation of the magnetic field changes within the plane of the interface, the signal displays periodic oscillations with respect to the angle between the field and the direction of the current. We show that in the underdoped to optimally doped range, a Fermi surface reconstruction takes place due to the Rashba spin-orbit term and that the oscillations are due to a magnetic field induced opening and closing of a gap at the $Γ$ point for those Ti out-of-plane orbitals having their band minimum close to the Fermi energy of the system.

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preprint2010arXiv

Two-dimensional quantum oscillations of the conductance at LaAlO3/SrTiO3 interfaces

We report on a study of magnetotransport in LaAlO3/SrTiO3 interfaces characterized by mobilities of the order of several thousands cm$^{2}$/Vs. We observe Shubnikov-de Haas oscillations that indicate a two-dimensional character of the Fermi surface. The frequency of the oscillations signals a multiple sub-bands occupation in the quantum well or a multiple valley configuration. From the temperature dependence of the oscillation amplitude we extract an effective carrier mass $m^{*}\simeq1.45$\,$m_{e}$. An electric field applied in the back-gate geometry increases the mobility, the carrier density and the oscillation frequency.

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