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Researcher profile

A. F. Zatsepin

A. F. Zatsepin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-ph

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Published work

3 published item(s)

preprint2020arXiv

Spin and charge distributions in Graphene/Nickel (111) substrate under Rashba spin-orbital coupling

To understand the coupling factor between Rashba spin-orbital interaction and ferromagnetic proximity effect, we design a Monte Carlo algorithm to simulate the spin and charge distributions for the room-temperature Rashba material, Graphene/Nickel(111) substrate, at finite temperature. We observe that the rate of exchange fluctuation is a key player to produce giant Rashba spin-orbit splitting in graphene. More importantly, we monitor the Rashba spin-splitting phenomenon where the spin-polarized electrons may be escaped from two opposite edges upon heating. However, the escaped electrons show Gaussian-like distribution in interior area that is important for spintronic engineers to optimize the efficiency of spin-state detection. In addition, we investigate if our Monte Carlo model can explain why room-temperature Rashba effect is observed in Graphene/Nickel(111) substrate experimentally. All results are presented in physical units.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Enormous enhancement of p-orbital magnetism and band gap in the lightly doped carbyne

This paper presents a path to tailor adapted magnetic and optical properties in carbyne. Although p-orbital magnetism is generally much weaker than d-orbital magnetism, we demonstrate that the charge fluctuation of the free radical electrons triggered by a time-varying electric dipole moment leads to enormous p-orbital magnetism. By introducing 25% arsenic and 12.5% fluorine into the monoatomic carbon chain, the magnetic moment of the arsenic atom reaches 2.9 Bohr Magneton, which is ~1.3 times stronger than magnetic moment of bulk Fe. This magnetically optimized carbyne composite carries an exchange-correlation energy of 22meV (~270K). On the other hand, we convert the carbyne (in beta-form) from metallic to a semiconducting state by using anionic dopants. After doping 12.5% nitrogen and 12.5% oxygen into the beta-carbyne, the semiconducting gap of this composite is optimized at 1.6eV, which is 1.4 times larger than the band gap of bulk silicon.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO$_2$

Cobalt and manganese ions are implanted into SiO$_2$ over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxygen, while metallic Co clusters form at higher implantation concentrations. For all concentrations studied here, Mn ions remain in interstitial locations and do not cluster. Using resonant x-ray emission spectroscopy and Anderson impurity model calculations, we determine the strength of the covalent interaction between the interstitial ions and the SiO$_2$ valence band, finding it comparable to Mn and Co monoxides. Further, we find an increasing reduction in the SiO$_2$ electronic band gap for increasing implantation concentration, due primarily to the introduction of Mn- and Co-derived conduction band states. We also observe a strong increase in a band of x-ray stimulated luminescence at 2.75 eV after implantation, attributed to oxygen deficient centers formed during implantation.

0 citations0 reviewsNo code linkedOpen access