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Source author record

A. F. Zatsepin

A. F. Zatsepin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-ph

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Published work

7 published item(s)

preprint2020arXiv

Spin and charge distributions in Graphene/Nickel (111) substrate under Rashba spin-orbital coupling

To understand the coupling factor between Rashba spin-orbital interaction and ferromagnetic proximity effect, we design a Monte Carlo algorithm to simulate the spin and charge distributions for the room-temperature Rashba material, Graphene/Nickel(111) substrate, at finite temperature. We observe that the rate of exchange fluctuation is a key player to produce giant Rashba spin-orbit splitting in graphene. More importantly, we monitor the Rashba spin-splitting phenomenon where the spin-polarized electrons may be escaped from two opposite edges upon heating. However, the escaped electrons show Gaussian-like distribution in interior area that is important for spintronic engineers to optimize the efficiency of spin-state detection. In addition, we investigate if our Monte Carlo model can explain why room-temperature Rashba effect is observed in Graphene/Nickel(111) substrate experimentally. All results are presented in physical units.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Enormous enhancement of p-orbital magnetism and band gap in the lightly doped carbyne

This paper presents a path to tailor adapted magnetic and optical properties in carbyne. Although p-orbital magnetism is generally much weaker than d-orbital magnetism, we demonstrate that the charge fluctuation of the free radical electrons triggered by a time-varying electric dipole moment leads to enormous p-orbital magnetism. By introducing 25% arsenic and 12.5% fluorine into the monoatomic carbon chain, the magnetic moment of the arsenic atom reaches 2.9 Bohr Magneton, which is ~1.3 times stronger than magnetic moment of bulk Fe. This magnetically optimized carbyne composite carries an exchange-correlation energy of 22meV (~270K). On the other hand, we convert the carbyne (in beta-form) from metallic to a semiconducting state by using anionic dopants. After doping 12.5% nitrogen and 12.5% oxygen into the beta-carbyne, the semiconducting gap of this composite is optimized at 1.6eV, which is 1.4 times larger than the band gap of bulk silicon.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Effect of symmetry on the electronic DOS, charge fluctuations and electron-phonon coupling in carbon chains

A theoretical model is provided to address the parameters influencing the electronic properties of kink-structured carbon chain at 0K. It is studied by the principle of DFT and solving the numerical 1D time-independent Schrödinger equation of electron and phonon simultaneously. Two different lengths of branches A and B, are occupied alternatively to generate the asymmetric carbon chain. The ratio of the asymmetric branch length,RAB=A/B, plays an important role in the electronic density of states DOS around Fermi level Ef . The highest DOS(Ef) occurs if the RAB equals to 2 and while the Fermi level coincides with the Von-Hove singularity at RAB=3. The location of the singularity point relative to the Ef is controllable via branch length interestingly. By comparison with the symmetric case, tuning the branch length asymmetrically shows a stronger impact to shift the Ef to the singularity point. The numerical solution of the 1D time independent Schrodinger equation of phonon indicates that the kink reinforces the charge fluctuations but the fluctuations are minimized when the RAB goes up. Based on the simulation results, the electron phonon coupling of the carbon nanowire decreases with chain length. In comparison to the symmetric structure, the electron phonon coupling of the asymmetric carbon chain is higher. The maximum electron phonon coupling of the asymmetric carbon chain takes place at RAB=2 . However, the weakening of the electron phonon coupling is observed owing to ultrahigh concentration of kinks. The reduction of the electron phonon coupling of the carbon chain is occurred under pressure.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Simulation of chemical bond distributions and phase transformation in carbon chains

In the present work we develop a Monte Carlo algorithm of the carbon chains ordered into 2D hexagonal array. The chemical bond of the chained carbon is computed from 1K to 1300K. Our model confirms that the beta phase is more energetic preferable at low temperatures but the system prefers the alpha phase at high temperatures. Based on the thermal effect on the bond distributions and 3D atomic vibrations in the carbon chains, the bond softening temperature is observed at 500K. The bond softening temperature is higher in the presence of interstitial doping but it does not change with the length of nanowire. The elastic modulus of the carbon chains is 1.7TPa at 5K and the thermal expansion is +7 x 10-5 K-1 at 300K via monitoring the collective atomic vibrations and bond distributions. Thermal fluctuation in terms of heat capacity as a function of temperatures is computed in order to study the phase transition across melting point. The heat capacity anomaly initiates around 3800K.

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preprint2016arXiv

Sn-loss effect in a Sn-implanted a-SiO2 host-matrix after thermal annealing: A combined XPS, PL, and DFT study

Amorphous a-SiO2 host-matrices were implanted with Sn-ions with and without posterior thermal tempering at 900 °C for 1 hour in ambient air. X-ray photoelectron spectroscopy analysis (XPS core-levels, XPS valence band mapping), photoluminescence (PL) probing, and density functional calculations (DFT) were employed to enable a detailed electronic structure characterization of these samples. It was experimentally established that the process of Sn-embedding into the a-SiO2 host occurs following two dissimilar trends: the Sn4+ -> Si4+ substitution in a-SiO2:Sn (without tempering), and Sn-metal clustering as interstitials in a-SiO2:Sn (900 °C, 1 hour). Both trends were modeled using calculated formation energies and partial densities of states (PDOS) as well as valence band (VB) simulations, which yielded evidence that substitutional defect generation occurs with the help of ion-implantation stimulated translocation of the host-atoms from their stoichiometric positions to the interstitial void. Experimental and theoretical data obtained coincide in terms of the reported Sn-loss effect in a-SiO2:Sn (900 °C, 1 hour) due to thermally-induced electronic host-structure re-arraignment, which manifests as backward host-atoms translocation into stoichiometric positions and the posterior formation of Sn-metal clusters.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electronic structure and photoluminescence properties of Zn-ion implanted silica glass before and after thermal annealing

The results of XPS core-level and valence band measurements, photoluminescence spectra of a-SiO2 implanted by Zn-ions (E=30 keV, D=1*1017 cm^-2) and Density Functional Theory calculations of electronic structure as well as formation energies of structural defects in silica glass induced by Zn-ion implantation are presented. Both theory and experiment show that it is energetically more favorable for implanted zinc ions to occupy the interstitial positions instead of cation substitution. As a result, the Zn-ions embedded to interstitials, form chemical bonds with the surrounding oxygen atoms, formation ZnO-like nanoparticles and oxygen-deficient SiOx matrix. The subsequent thermal annealing at 900 0C (1 hr) strongly reduces the amount of ZnO nanoparticles and induces the formation of α-Zn2SiO4 phase which markedly enhances the green emission.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO$_2$

Cobalt and manganese ions are implanted into SiO$_2$ over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxygen, while metallic Co clusters form at higher implantation concentrations. For all concentrations studied here, Mn ions remain in interstitial locations and do not cluster. Using resonant x-ray emission spectroscopy and Anderson impurity model calculations, we determine the strength of the covalent interaction between the interstitial ions and the SiO$_2$ valence band, finding it comparable to Mn and Co monoxides. Further, we find an increasing reduction in the SiO$_2$ electronic band gap for increasing implantation concentration, due primarily to the introduction of Mn- and Co-derived conduction band states. We also observe a strong increase in a band of x-ray stimulated luminescence at 2.75 eV after implantation, attributed to oxygen deficient centers formed during implantation.

0 citations0 reviewsNo code linkedOpen access