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A. Dorokhov

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physics.ins-det hep-ex hep-ph

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preprint2019arXiv

Observations on MIMOSIS-0, the first dedicated CPS prototype for the CBM MVD

The Micro Vertex Detector (MVD) of the future Compressed Baryonic Matter (CBM) experiment at FAIR will have to provide a spatial precision of $\sim 5~\rm μm$ in combination with a material budget of 0.3\% - 0.5\% X$_0$ for a full detector station. Simultaneously, it will have to handle the rate and radiation load of operating the fixed target experiment at an average collision rate of 100 kHz (4 - 10 AGeV Au+Au collisions) or 10 MHz (up to 28 GeV p-A collisions). The harsh requirements call for a dedicated detector technology, which is the next generation CMOS Monolithic Active Pixel Sensor MIMOSIS. We report about the requirements for the sensor, introduce the design approach being followed to cope with it and show first test results from a first sensor prototype called MIMOSIS-0 .

preprint2016arXiv

On drift fields in CMOS Monolithic Active Pixel Sensors with point-like collection diodes

- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors. We study the feasibility of this approach for the common case that the collection diodes of the pixel are small as compared to the pixel pitch. An analytic equation predicting the thickness of the depletion depth and the capacity of this point-like junction is introduced. We find that the predictions of this equations differs qualitatively from the usual results for flat PN junctions and that $dC/dU$-measurements are not suited to measure the depletion depth of diodes with point-like geometry. The predictions of the equation is compared with measurements on the depletion depth of CMOS sensors, which were carried out with a novel measurement protocol. It is found that the equation and the measurement results match with each other. By comparing our findings with TCAD simulations, we find that precise simulation models matches the empirical findings while simplified models overestimate the depletion depth dramatically. A potential explanation for this finding is introduced and the consequences for the design of CMOS sensors are discussed.

preprint2012arXiv

Condensate mechanism of conformal symmetry breaking

The low energy Gell-Mann-Oakes-Renner relation, Higgs particle mass value, and the new observational cosmological data are considered as evidence of the condensate mechanism of conformal symmetry breaking at the quantum level. The condensate mechanism occurs by means of normal ordering of field operators in QCD, Minimal Standard Model of electroweak interactions without the Higgs potential, and the Dirac conformal General Relativity with long range forces.

preprint2006arXiv

Simulation of Heavily Irradiated Silicon Pixel Detectors

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.

preprint2005arXiv

A double junction model of irradiated silicon pixel sensors for LHC

In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The modeling proves that a doubly peaked electric field generated by the two defect levels is necessary to describe the data and excludes a description based on acceptor defects uniformly distributed across the sensor bulk. In addition, the dependence of trap concentrations upon fluence is established by comparing the measured and simulated profiles at several fluences and bias voltages.

preprint2004arXiv

Position Dependence of Charge Collection in Prototype Sensors for the CMS Pixel Detector

This paper reports on the sensor R&D activity for the CMS pixel detector. Devices featuring several design and technology options have been irradiated up to a proton fluencec of 1E15 n_eq/cm**2 at the CERN PS. Afterward they were bump bonded to unirradiated readout chips and tested using high energy pions in the H2 beam line of the CERN SPS. The readout chip allows a non zero suppressed full analogue readout and therefore a good characterization of the sensors in terms of noise and charge collection properties. The position dependence of signal is presented and the differences between the two sensor options are discussed.

preprint2003arXiv

Tests of silicon sensors for the CMS pixel detector

The tracking system of the CMS experiment, currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland), will include a silicon pixel detector providing three spacial measurements in its final configuration for tracks produced in high energy pp collisions. In this paper we present the results of test beam measurements performed at CERN on irradiated silicon pixel sensors. Lorentz angle and charge collection efficiency were measured for two sensor designs and at various bias voltages.