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Researcher profile

A. Csik

A. Csik contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

6 published item(s)

preprint2015arXiv

Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance

The conductive bridge non-volatile memory technology is an emerging way to replace traditional charge based memory devices for future neural networks and configurable logic applications. An array of the memory devices that fulfills logic operations must be developed for implementing such architectures. A scheme to fabricate these arrays, using ion bombardment through a mask, has been suggested and advanced by us. Performance of the memory devices is studied, based on the formation of vias and damage accumulation due to the interactions of Ar+ ions with GexSe1-x (x=0.2, 0.3 and 0.4) chalcogenide glasses as a function of the ion energy and dose dependence. Blanket films and devices were created to study the structural changes, surface roughness, and device performance. Raman Spectroscopy, Atomic Force Microscopy (AFM), Energy Dispersive X-Ray Spectroscopy (EDS) and electrical measurements expound the Ar+ ions behavior on thin films of GexSe1-x system. Raman studies show that there is a decrease in area ratio between edge-shared to corner-shared structural units, revealing occurrence of structural reorganization within the system as a result of ion/film interaction. AFM results demonstrate a tendency in surface roughness improvement with increased Ge concentration, after ion bombardment. EDS results reveal a compositional change in the vias, with a clear tendency of greater interaction between ions and the Ge atoms, as evidenced by greater compositional changes in the Ge rich films.

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preprint2015arXiv

Light-induced mass transport in amorphous chalcogenides: Towards surface plasmon-assisted nanolithography and near-field nanoimaging

Two types of amorphous functional materials, based on lightsensitive inorganic compounds like Se and As20Se80 chalcogenide glass (ChG) were investigated with the aim to establish the influence of plasmonic fields, excited by the band-gap light in nanocomposite layers made of these compounds and gold nanoparticles on their photomechanical response. Both these basic materials are characterized by pronounced photoplastic effect and used for real-time optical recording of optoelectronic elements (based mainly on surface relief gratings) due to high photofluidity and polarization-dependent masstransport. We established that mass-transport processes in these ChG can be enhanced in the presence of localized plasmonic fields generated by light if the condition of surface plasmon resonance (SPR) is fulfilled. The subjects of special interest are the mass-transport processes at the nano-scale stimulated in the nano-copmosite layers of either by the uniform or periodically distributed optical fields. It was found that irradiation by light with SPR really enhance the efficiency of masstransport and produce surface nanostructurizations. The variation in the topography follows closely and permanently the underlying near field intensity pattern.

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preprint2015arXiv

Nanoscale characterization of thin immersion silver coatings on copper substrates

Microelectronic-grade copper foils were immersion silver plated in a home-made non-cyanide alkaline silver nitrate - thiosulfate solution and in two commercially available industrial baths via contact reductive precipitation. The concentration depth profiles of the freshly deposited silver layers were afterwards analyzed at nanoscale resolution by means of Secondary Neutral Mass Spectrometry (SNMS) and Glow Discharge Optical Emission Spectroscopy (GDOES). The thickness of deposited silver layers obtained with 30-60 s immersion time were in the range of 50-150 nm, depending on the parameters of the immersion procedure. Slight contamination of sulfur from the thiosulfate bath was detectable. Traces of Cr and Na could be observed as well around the interface between the copper substrate and silver deposit. Results also indicate that storage for longer time in air especially at higher than ambient temperatures induces a kind of ageing effect in the deposited layer, changing its composition. In case of samples prepared from home-made solution increasing amounts of copper together with its corrosion products became detectable.

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preprint2014arXiv

Segregation of the Eu impurity as function of its concentration in the melt for growing of the lead telluride doped crystals by the Bridgman method

Behaviour of a rare earth impurity of Eu in the PbTe single crystals grown by the Bridgman method from the melt with different initial concentrations of impurity N about 1*10+19 cm-3 and less is investigated with X-ray fluorescent element analysis, Secondary Neutral Mass Spectroscopy (SNMS), and magnetic measurements. The impurity distributions along and across the doped ingots are established. It is revealed that doping impurity enters into the bulk of doped crystals only if its initial concentration in the melt is high enough, approximately 1*10+20 cm-3. If this concentration is lower, about 1*10+19 cm-3 and less, the doping Eu impurity is pushed out onto the surface of doped ingot. The thickness of the doped surface layer is estimated to be in the order of several microns or somewhat more. The longitudinal distributions of Eu impurity along the axis of doped ingot for N=1*10+20 cm-3, as well as the transverse one in the surface layer where entire doping impurity is pushed out for N=1*10+19 cm-3, are strongly non-monotonic. Possible reasons for this unusual behaviour of Eu doping impurity during the growth of PbTe:Eu crystals from the melt are analyzed.

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preprint2014arXiv

Structural, magnetic and superconducting characterization of the CuNi/Nb bilayers of the S/F type using Polarized Neutron Reflectometry and complementary techniques

Structural, magnetic, and superconducting properties of S/F bilayers Nb/Cu40Ni60 deposited on silicon substrate have been characterized using Polarized Neutron Reflectometry and complementary techniques. The study allowed to determine real thicknesses of the S and F layers as well as the r.m.s. roughness of the S/F interfaces. The latter does not exceed 1 nm, showing the high quality of the S/F interface. Using SQUID and a mutual inductance setup we determined the superconducting transition temperatures of the samples, which are in agreement with the literature data. Using of PNR for the single S layer allowed to determine the screening length lambda of the superconducting layer, lambda = 120 nm. This value is higher than the London penetration depth for pure niobium which may indicate that the superconductor is in the dirty limit. PNR and SQUID studies of magnetic properties of the CuNi layer have shown the presence of ferromagnetism in all investigated samples.

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preprint2013arXiv

On the feasibility to study inverse proximity effect in a single S/F bilayer by Polarized Neutron Reflectometry

Here we report on a feasibility study aiming to explore the potential of Polarized Neutron Reflectometry (PNR) for detecting the inverse proximity effect in a single superconducting/ferromagnetic bilayer. Experiments, conducted on the V(40nm)/Fe(1nm) S/F bilayer, have shown that experimental spin asymmetry measured at T = 0.5TC is shifted towards higher Q values compared to the curve measured at T = 1.5TC. Such a shift can be described by the appearance in superconducting vanadium of magnetic sub-layer with thickness of 7 nm and magnetization of +0.8 kG.

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