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A. C. Wilson

A. C. Wilson contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2020arXiv

Ion transport and reordering in a two-dimensional trap array

Scaling quantum information processors is a challenging task, requiring manipulation of a large number of qubits with high fidelity and a high degree of connectivity. For trapped ions, this could be realized in a two-dimensional array of interconnected traps in which ions are separated, transported and recombined to carry out quantum operations on small subsets of ions. Here, we use a junction connecting orthogonal linear segments in a two-dimensional (2D) trap array to reorder a two-ion crystal. The secular motion of the ions experiences low energy gain and the internal qubit levels maintain coherence during the reordering process, therefore demonstrating a promising method for providing all-to-all connectivity in a large-scale, two- or three-dimensional trapped-ion quantum information processor.

preprint2020arXiv

Laser-free trapped-ion entangling gates with simultaneous insensitivity to qubit and motional decoherence

The dominant error sources for state-of-the-art laser-free trapped-ion entangling gates are decoherence of the qubit state and the ion motion. The effect of these decoherence mechanisms can be suppressed with additional control fields, or with techniques that have the disadvantage of reducing gate speed. Here, we propose using a near-motional-frequency magnetic field gradient to implement a laser-free gate that is simultaneously resilient to both types of decoherence, does not require additional control fields, and has a relatively small cost in gate speed.

preprint2020arXiv

Quantum logic spectroscopy with ions in thermal motion

A mixed-species geometric phase gate has been proposed for implementing quantum logic spectroscopy on trapped ions that combines probe and information transfer from the spectroscopy to the logic ion in a single pulse. We experimentally realize this method, show how it can be applied as a technique for identifying transitions in currently intractable atoms or molecules, demonstrate its reduced temperature sensitivity, and observe quantum-enhanced frequency sensitivity when it is applied to multi-ion chains. Potential applications include improved readout of trapped-ion clocks and simplified error syndrome measurements for quantum error correction.

preprint2020arXiv

State Readout of a Trapped Ion Qubit Using a Trap-Integrated Superconducting Photon Detector

We report high-fidelity state readout of a trapped ion qubit using a trap-integrated photon detector. We determine the hyperfine qubit state of a single $^9$Be$^+$ ion held in a surface-electrode rf ion trap by counting state-dependent ion fluorescence photons with a superconducting nanowire single-photon detector (SNSPD) fabricated into the trap structure. The average readout fidelity is 0.9991(1), with a mean readout duration of 46 $μ$s, and is limited by the polarization impurity of the readout laser beam and by off-resonant optical pumping. Because there are no intervening optical elements between the ion and the detector, we can use the ion fluorescence as a self-calibrated photon source to determine the detector quantum efficiency and its dependence on photon incidence angle and polarization.

preprint2020arXiv

VECSEL systems for quantum information processing with trapped beryllium ions

Two vertical-external-cavity surface-emitting laser (VECSEL) systems producing ultraviolet (UV) radiation at 235 nm and 313 nm are demonstrated. The systems are suitable for quantum information processing applications with trapped beryllium ions. Each system consists of a compact, single-frequency, continuous-wave VECSEL producing high-power near-infrared light, tunable over tens of nanometers. One system generates 2.4 W at 940 nm, using a gain mirror based on GaInAs/GaAs quantum wells, which is converted to 54 mW of 235 nm light for photoionization of neutral beryllium atoms. The other system uses a novel gain mirror based on GaInNAs/GaAs quantum-wells, enabling wavelength extension with manageable strain in the GaAs lattice. This system generates 1.6 W at 1252 nm, which is converted to 41 mW of 313 nm light that is used to laser cool trapped $^{9}$Be$^{+}$ ions and to implement quantum state preparation and detection. The 313 nm system is also suitable for implementing high-fidelity quantum gates, and more broadly, our results extend the capabilities of VECSEL systems for applications in atomic, molecular, and optical physics.