Researcher profile

A. Bose

A. Bose contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2022arXiv

Does fractal Universe favour warm inflation: Observational support?

The present work examines the possibility of warm inflationary paradigm in the modified gravity theory with fractal geometry. By choosing the normal fluid as radiation fluid and the effective fluid (with the extra term in modified field equation) as the inflaton field both strong and weak dissipative regimes have been studied using slow roll approximation with quasi-stable criteria for radiation. Finally, using the Planck data set, the present model has been analyzed for various choices of the fractal function and the dissipation parameter.

preprint2015arXiv

Study of impurity distribution in mechanically polished, chemically treated and high vacuum degassed pure Niobium samples using TOFSIMS technique

The performance of Superconducting radio frequency cavities (SRF) is strongly influenced by various impurities within the penetration depth (~50nm) of Nb, which in turn depends on the applied surface treatments. The effect of these surface treatments on the impurities of Nb has been explored using various surface analytical treatments. But, the results are still inadequate in many aspects and the effect of sequential SRF treatments on the impurity distribution has not been explored. The present study analyses various impurities within the penetration depth of Nb samples, treated by SRF cavity processing techniques like colloidal silica polishing (simulating centrifugal barrel polishing), buffer chemical polishing (BCP), high pressure rinsing (HPR) and degassing under high vacuum (HV) condition at 600°C for 10hrs. Static, dynamic and slow sputtering modes of Time of flight secondary ion mass spectrometry (TOFSIMS) technique was employed to study the effect of the above treatments on interstitial impurities, hydrocarbons, oxides, acidic residuals, reaction products and metallic contaminations. The study confirms that the impurity distribution in Nb is not only sensitive to the surface treatment, but also to their sequence. Varying the treatment sequence prior to HV degassing treatments affected the final impurity levels in HV degassed bulk Nb samples. BCP treated samples, exhibited minimum hydrocarbon and metallic contamination but, led to extensive contamination of the oxide layer with residuals and reaction products of acids used in BCP solution. HPR treatment, on the other hand was effective in reducing the acidic impurities on the top surface. The study also establishes the application of TOFSIMS technique to analyze and evolve SRF treatments.

preprint2014arXiv

Magneto-Seebeck effect in spin-valve with in-plane thermal gradient

We present measurements of magneto-Seebeck effect on a spin valve with in-plane thermal gradient. We measured open circuit voltage and short circuit current by applying a temperature gradient across a spin valve stack, where one of the ferromagnetic layers is pinned. We found a clear hysteresis in these two quantities as a function of magnetic field. From these measurements, the magneto-Seebeck effect was found to be 0.82%.

preprint2013arXiv

Studies on temperature dependent semiconductor to metal transitions in ZnO thin films sparsely doped with Al

For a detailed study on the semiconductor to metal transition (SMT) in ZnO thin films doped with Al in the concentration range from 0.02 to 2%, we grew these films on (0001) sapphire substrates using sequential pulsed laser deposition. It was found that the Al concentration in the films increased monotonically with the ratio of ablation durations of the Alumina and ZnO targets used during the deposition. Using X-ray photo electron spectroscopy it was found that while most of the Al atoms occupy the Zn sites in the ZnO lattice, a small fraction of the Al also gets into the grain boundaries present in the films. The observed SMT temperature decreased from ~ 270 to ~ 50 K with increase in the Al concentration from 0.02 to 0.25 %. In the Al concentration range of ~ 0.5 to 2 % these doped ZnO films showed metallic behavior at all the temperatures without undergoing any SMT. A theoretical model based on thermal activation of electrons and electron scatterings due to the grain boundaries, ionic impurities and phonons has been developed to explain the observed concentration and temperature dependent SMT.