Source author record

A. A. Zakharov

A. A. Zakharov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el nucl-ex

Catalog footprint

What is connected

5works

4topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2022arXiv

The Diamond (111) Surface Reconstruction and Epitaxial Graphene Interface

The evolution of the diamond (111) surface as it undergoes reconstruction and subsequent graphene formation is investigated with angle-resolved photoemission spectroscopy, low energy electron diffraction, and complementary density functional theory calculations. The process is examined starting at the C(111)-(2x1) surface reconstruction that occurs following detachment of the surface adatoms at 920 °C, and continues through to the liberation of the reconstructed surface atoms into a free-standing monolayer of epitaxial graphene at temperatures above 1000 °C. Our results show that the C(111)-(2x1) surface is metallic as it has electronic states that intersect the Fermi-level. This is in strong agreement with a symmetrically π-bonded chain model and should contribute to resolving the controversies that exist in the literature surrounding the electronic nature of this surface. The graphene formed at higher temperatures exists above a newly formed C(111)-(2\times1) surface and appears to have little substrate interaction as the Dirac-point is observed at the Fermi-level. Finally, we demonstrate that it is possible to hydrogen terminate the underlying diamond surface by means of plasma processing without removing the graphene layer, forming a graphene-semiconductor interface. This could have particular relevance for doping the graphene formed on the diamond (111)surface via tuneable substrate interactions as a result of changing the terminating species at the diamond-graphene interface by plasma processing.

preprint2016arXiv

Intercalation of graphene on SiC(0001) via ion-implantation

Electronic devices based on graphene technology are catching on rapidly and the ability to engineer graphene properties at the nanoscale is becoming, more than ever, indispensable. Here, we present a new procedure of graphene functionalization on SiC(0001) that paves the way towards the fabrication of complex graphene electronic chips. The procedure resides on the well-known ion-implantation technique. The efficiency of the working principle is demonstrated by the intercalation of the epitaxial graphene layer on SiC(0001) with Bi atoms, which was not possible following standard procedures. Our results put forward the ion-beam lithography to nanostructure and functionalize desired graphene chips.

preprint2014arXiv

Direct Observation of Decoupled Structural and Electronic Transitions and an Ambient Pressure Monoclinic-Like Metallic Phase of VO$_2$

We report the simultaneous measurement of the structural and electronic components of the metal-insulator transition of VO$_2$ using electron and photoelectron spectroscopies and microscopies. We show that these evolve over different temperature scales, and are separated by an unusual monoclinic-like metallic phase. Our results provide conclusive evidence that the new monoclinic-like metallic phase, recently identified in high-pressure and nonequilibrium measurements, is accessible in the thermodynamic transition at ambient pressure, and we discuss the implications of these observations on the nature of the MIT in VO$_2$.

preprint2011arXiv

Silicon intercalation into the graphene-SiC interface

In this work we use LEEM, XPEEM and XPS to study how the excess Si at the graphene-vacuum interface reorders itself at high temperatures. We show that silicon deposited at room temperature onto multilayer graphene films grown on the SiC(000[`1]) rapidly diffuses to the graphene-SiC interface when heated to temperatures above 1020. In a sequence of depositions, we have been able to intercalate ~ 6 ML of Si into the graphene-SiC interface.

preprint2009arXiv

Preparation of facilities for fundamental research with ultracold neutrons at PNPI

The WWR-M reactor of PNPI offers a unique opportunity to prepare a source for ultracold neutrons (UCN) in an environment of high neutron flux (about 3*10^12 n/cm^2/s) at still acceptable radiation heat release (about 4*10^-3 W/g). It can be realized within the reactor thermal column situated close to the reactor core. With its large diameter of 1 m, this channel allows to install a 15 cm thick bismuth shielding, a graphite premoderator (300 dm^3 at 20 K), and a superfluid helium converter (35 dm^3). At a temperature of 1.2 K it is possible to remove the heat release power of about 20 W. Using the 4pi flux of cold neutrons within the reactor column can bring more than a factor 100 of cold neutron flux incident on the superfluid helium with respect to the present cold neutron beam conditions at the ILL reactor. The storage lifetime for UCN in superfluid He at 1.2 K is about 30 s, which is sufficient when feeding experiments requiring a similar filling time. The calculated density of UCN with energy between 50 neV and 250 neV in an experimental volume of 40 liters is about 10^4 n/cm^3. Technical solutions for realization of the project are discussed.