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A. A. Ünal

A. A. Ünal appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2016arXiv

Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi$_{1-x}$Mn$_x)_2$Se$_3$

Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic topological insulator with a pronounced surface band gap of $\sim100$ meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surface nor to the local magnetic moment of the Mn, making the system unsuitable for realizing the novel phases. We further show that Mn doping does not affect the inverted bulk band gap and the system remains topologically nontrivial. We suggest that strong resonant scattering processes cause the gap at the Dirac point and support this by the observation of in-gap states using resonant photoemission. Our findings establish a novel mechanism for gap opening in topological surface states which challenges the currently known conditions for topological protection.

preprint2015arXiv

Ferrimagnetic nanostructures for magnetic memory bits

Increasing the magnetic data recording density requires reducing the size of the individual memory elements of a recording layer as well as employing magnetic materials with temperature-dependent functionalities. Therefore, it is predicted that the near future of magnetic data storage technology involves a combination of energy-assisted recording on nanometer-scale magnetic media. We present the potential of heat-assisted magnetic recording on a patterned sample; a ferrimagnetic alloy composed of a rare earth and a transition metal, DyCo$_5$, which is grown on a hexagonal-ordered nanohole array membrane. The magnetization of the antidot array sample is out-of-plane oriented at room temperature and rotates towards in-plane upon heating above its spin-reorientation temperature (T$_R$) of ~350 K, just above room temperature. Upon cooling back to room temperature (below T$_R$), we observe a well-defined and unexpected in-plane magnetic domain configuration modulating with ~45 nm. We discuss the underlying mechanisms giving rise to this behavior by comparing the magnetic properties of the patterned sample with the ones of its extended thin film counterpart. Our results pave the way for novel applications of ferrimagnetic antidot arrays of superior functionality in magnetic nano-devices near room temperature.