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Tuning the electrical resistivity of semiconductor thin films by nanoscale corrugation

The low-temperature electrical resistivity of corrugated semiconductor films is theoretically considered. Nanoscale corrugation enhances the electron-electron scattering contribution to the resistivity, resulting in a stepwise resistivity development with increasing corrugation amplitude. The enhanced electron scattering is attributed to the curvature-induced potential energy that affects the motion of electrons confined to a thin curved film. Geometric conditions and microscopic mechanism of the stepwise resistivity are discussed in detail.

preprint2009arXivOpen access
Shota OnoHiroyuki Shima
cond-mat.mes-hallcond-mat.other
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Open access2 authors2 topics
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Shota OnoHiroyuki Shima

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