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Transport properties of a GaAs/InGaAs/GaAs quantum well: temperature, magnetic field and many-body effects

We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogeneous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.

preprint2020arXivOpen access
Truong Van TuanNguyen Quoc KhanhVo Van TaiDang Khanh Linh
cond-mat.mes-hall
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Open access4 authors1 topic
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Truong Van TuanNguyen Quoc KhanhVo Van TaiDang Khanh Linh

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