Paper detail

Transient Characteristics of $β$-Ga$_2$O$_3$ Nanomembrane Schottky Barrier Diodes on Various Substrates

In this paper, a transient delayed rising and fall time of $β$-Ga$_2$O$_3$ NMs Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyimide) were measured using a sub-micron second resolution time-resolved electrical measurement system under a different temperature condition. The devices exhibited noticeably less-delayed turn-on-/off- the transient time when $β$-Ga$_2$O$_3$ NMs SBDs were transfer-printed on a high-k substrate. Furthermore, a relationship between the $β$-Ga$_2$O$_3$ NM thicknesses and their transient characteristics were systematically investigated and found that phonon scattering plays an important role in heat dissipation as the thickness of $β$-Ga$_2$O$_3$ NMs get thinner which is also verified by the Multiphysics simulator. Overall, our result reveals the impact of various substrates with different thermal properties and different \b{eta}- Ga2O3 NMs thickness with the performance of $β$-Ga$_2$O$_3$ NMs based devices. Hence, these results can guide further efforts us to optimize the performance of future $β$-Ga$_2$O$_3$ devices by maximizing heat dissipation from the $β$-Ga$_2$O$_3$ layer.