Theoretical investigation of the four-layered self-doped high-Tc_c superconductors: evidence of pair tunneling effect

preprint2011arXivOpen access

Abstract

Based on a four-layered self-doped t−Jt-J type model and the slave-boson mean-field approach, we study theoretically the superconductivity in the electron-doped and hole-doped layers. The neighbor layers are coupled through both the single electron interlayer hopping and pair tunneling effect. The superconducting gap magnitude for the electron-doped band is nearly twice of that of the hole-doped one, which contrasts to our previous understanding of the electron-hole asymmetry in high-Tc_c superconductors but consistent with recent angle-resolved-photoemission-spectroscopy experiments in four-layered materials Ba2_2Ca3_3Cu4_4O8_8F2_2. Our results propose that the pair tunneling effect is important to examine the multi-layered superconducting materials.

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