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Symmetry-protected Dirac nodal lines and large spin Hall effect in $\mathbf{V_6Sb_4}$ with kagome bilayer

Recently, a family of nonmagnetic kagome metals \textit{A}$\mathrm{V_3Sb_5}$ (\textit{A}=K, Rb, and Cs) has attracted significant attention for realizing the intertwining of quantum order and nontrivial topology. However, these compounds have been identified to host complex band structures. Therefore, it is desirable to design and synthesize novel kagome materials with a simple band topology and good transport properties. In this study, using first-principles calculations, we present the electronic properties and the intrinsic spin Hall effect of V$_6$Sb$_4$, the latest experimentally synthesized vanadium-based compounds with a kagome bilayer. In the absence of spin-orbital coupling (SOC), this compound is a Dirac nodal line semimetal with symmetry-protected nodal rings near the Fermi level. Within the SOC, the spin-rotation symmetry breaks the gaps of the nodal rings with a small band gap. Furthermore, based on the Wannier tight-binding approach and the Kubo formula, we propose a large spin Hall effect in V$_6$Sb$_4$, which intrinsically originates from the spin Berry curvature. Our work further expands nonmagnetic kagome compounds for applications in spintronics accompanied by exotic quantum order.