Paper detail

Study of magneto-transport properties and quantum oscillations in PbSe single crystals

PbSe is a low-gap semiconductor with excellent infrared photo-detection properties. Here we report our high magnetic field and low temperature electrical properties measurement performed on a moderately doped PbSe single crystals with p-type bulk carrier density of around $1\times10^{18}$ cm$^{-3}$. Longitudinal resistance (R$_{xx}$) and Hall resistance (R$_{xy}$) were simultaneously measured between 0 T--18 T at several temperatures between 0.8 K--25 K. These transport measurements start showing oscillatory behavior around and above 6 T of magnetic field. The quantum oscillation frequency is ~15 T, giving an estimate for the carrier density of each L pocket in the BZ participating in these oscillations. The effective mass of the free carriers is estimated from the temperature dependence of oscillation amplitudes. Measurements as the magnetic fields is rotated reveal the magneto-transport properties of a 3D-like fermi surface. Free carrier scattering rate from the transport data has been estimated which also gave an estimation of Dingle temperature in PbSe. Room temperature optical measurements has been conducted and other optical properties has been estimated. The Drude-Lorentz model fit has been performed which show a low frequency phonon mode around 45 cm$^{-1}$ and bandgap of around 0.2 eV along with other interband electronic transitions. Some of the optical and transport results has been compared against other members of class IV-VI chalcogenides.