Spin accumulation in ferromagnetic single-electron transistors in the cotunneling regime

preprint2002arXivOpen access

Abstract

We propose a new method of direct detection of spin accumulation, which overcomes problems of previous measurement schemes. A spin dependent current in a single-electron transistor with ferromagnetic electrodes leads to spin accumulation on the metallic island. The resulting spin-splitting of the electrochemical potentials of the island, because of an additional shift by the charging energy, can be detected from the spacing between two resonances in the current-voltage characteristics. The results were obtained in the framework of a real-time diagrammatic approach which allows to study higher order (co-)tunneling processes in the strong nonequlibrium situation.

Explore this paper’s authors, topics and related work.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Reviews 0

Write a reviewWrite

No reviews yet.

Discussion 0

Add a commentWrite

No comments yet.