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Small-signal amplifier based on single-layer MoS2

In this Letter we demonstrate the operation of an analog small-signal amplifier based on single-layer MoS2, a semiconducting analogue of graphene. Our device consists of two transistors integrated on the same piece of single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based amplifiers to operate with a room temperature gain of 4. The amplifier operation is demonstrated for the frequencies of input signal up to 2 kHz preserving the gain higher than 1. Our work shows that MoS2 can effectively amplify signals and that it could be used for advanced analog circuits based on two-dimensional materials.

preprint2012arXivOpen access
Branimir RadisavljevicMichael B. WhitwickAndras Kis
cond-mat.mes-hallcond-mat.mtrl-sci
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Branimir RadisavljevicMichael B. WhitwickAndras Kis

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