Abstract
We experimentally investigated the properties of graphite layers produced by an easy and non-conventional method of repeatedly rubbing conventional random stacked graphite bulk against insulating and semiconductor substrates. The patterned structure composed of rubbed-off and transferred layers exhibits properties of a solid-state material with through-thickness anisotropy of carrier mobility reaching ~10^3 cm^2/V*sec at the surface. The surface of the structure demonstrates quality of more ordered and optically oriented mono or few layer graphene shaped by self-organization process due to friction. Enhanced photoconductivity originating from modification of continuous and linear valence and conduction bands caused by interaction between 4 graphene layers made possible obtaining Raman spectra at near infrared excitation wavelength of 976 nm.
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