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Paper detail

Second order divergence in the third order DC response of a cold semiconductor

In this work, we present the analytical expression for the second order divergence in the third order DC response of a cold semiconductor, which can be probed by different electric field setups. Results from this expression were then compared, for the response of the gapped graphene monolayer, with numerical results from a velocity gauge calculation of the third order conductivity. The good agreement between the two validates our analytical expression.

preprint2020arXivOpen access
G. B. VenturaD. J. PassosJ. M. Viana Parente LopesJ. M. B. Lopes dos Santos
cond-mat.mes-hall
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G. B. VenturaD. J. PassosJ. M. Viana Parente LopesJ. M. B. Lopes dos Santos

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