Abstract

We incorporate quantum size effect to investigate the extrinsic spin-Hall effect in ultrathin metal films. A Lippmann-Schwinger formalism based theoretical method, accounting for quantum confinement and surface roughness scattering, is developed to calculate both spin-Hall and longitudinal resistivities and spin-Hall angle. The presence of quantum confinement gives rise to a linear relation ρsH=αρ+βρ_{sH}=αρ+β between the extrinsic spin-Hall resistivity ρsHρ_{sH} and longitudinal charge resistivity ρρ. The linear term αραρ originates from side jump, and the constant ββ is due to skew scattering. This deviates significantly from the commonly accepted scaling law ρsH=aρ2+bρρ_{sH}=aρ^2+bρ in a bulk conductor. Thus we call for cautious interpretation of experimental data when applying the scaling law.

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