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Roton-maxon spectrum and instability for weakly interacting dipolar excitons in a semiconductor layer

The formation of the roton-maxon excitation spectrum and the roton instability effect for a weakly correlated Bose gas of dipolar excitons in a semiconductor layer are predicted. The stability diagram is calculated. According to our numerical estimations, the threshold of the roton instability for Bose-Einstein condensed exciton gas with roton-maxon spectrum is achievable experimentally, e.g., in GaAs semiconductor layers.

preprint2014arXivOpen access
A. K. FedorovI. L. KurbakovYu. E. Lozovik
cond-mat.quant-gas
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A. K. FedorovI. L. KurbakovYu. E. Lozovik

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