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Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3

(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states in this ternary system. Large tunability in transport properties by varying the Sb doping level has also been observed, where insulating phase could be achieved at x=0.5. Our results reveal the potential of this system for the study of tunable topological insulator and metal-insulator transition based device physics.

preprint2016arXivOpen access
Y. Hung LiuC. Wei ChongW. Chuan ChenJ. C. A. HuangC. -Maw ChengK. -Ding TsueiZ. LiH. QiuV. V. Marchenkov
cond-mat.mes-hall
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Open access9 authors1 topic
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Y. Hung LiuC. Wei ChongW. Chuan ChenJ. C. A. HuangC. -Maw ChengK. -Ding TsueiZ. LiH. QiuV. V. Marchenkov

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