Robust non-integer conductance in disordered 2D Dirac semimetals

preprint2022arXivOpen access

Abstract

We study the conductance GG of 2D Dirac semimetal nanowires at the presence of disorder. For an even nanowire length LL determined by the number of unit cells, we find non-integer values for GG that are independent of LL and persist with weak disorder, indicated by the vanishing fluctuations of GG. The effect is created by a combination of the scattering effects at the contacts(interface) between the leads and the nanowire, an energy gap present in the nanowire for even LL and the topological properties of the 2D Dirac semimetals. Unlike conventional materials the reduced GG due to the scattering at the interface, is stabilized at non-integer values inside the nanowire, leading to a topological phase for weak disorder. For strong disorder the system leaves the topological phase and the fluctuations of GG are increased as the system undergoes a transition/crossover toward the Anderson localized(insulating) phase, via a non-standard disordered phase. We study the scaling and the statistics of GG at these phases. In addition we have found that the effect of robust non-integer GG disappears for odd LL, which results in integer GG, determined by the number of open channels in the nanowire, due to resonant scattering.

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