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Resistivity of Graphene Nanoribbon Interconnects

Graphene nanoribbon interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given line-width (18nm<W<52nm) is about 3X that of a Cu wire, whereas the best GNR has a resistivity comparable to that of Cu. The conductivity is found to be limited by impurity scattering as well as LER scattering; as a result, the best reported GNR resistivity is 3X the limit imposed by substrate phonon scattering. This study reveals that even moderate-quality graphene nanowires have the potential to outperform Cu for use as on-chip interconnects.

preprint2009arXivOpen access
Raghunath MuraliKevin BrennerYinxiao YangThomas BeckJames D. Meindl
cond-mat.mes-hallcond-mat.mtrl-sci
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Raghunath MuraliKevin BrennerYinxiao YangThomas BeckJames D. Meindl

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