Abstract
This work aims at analyzing the adequacy of Laguerre-Gauss (LG) beams and three-level quantum systems to build quantum memories. We focus on such systems in which there is a phenomenon called Eletromagnetic Induced Transparency (EIT) which enables the information storage in atomic cells. We show both theoretical and practical results regarding LG beams and the conditions according to which EIT raises. The existence of such conditions is necessary to the implementation of quantum memories in this scenario.
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