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Paper detail

Proposal for a spin MOSFET based on spin gapless semiconductors

We propose a spintronic metal oxide semiconductor field effect transistor (spin MOSFET) where a spin gapless semiconductor (SGS) constitutes the channel and the drain is a ferromagnetic metal. SGS exhibit a non-zero band gap in only one of the spin sub-bands and feature complete spin polarization at finite temperature. We present an analytical model of the device and comment the properties relevant for devices applications. Our results boost SGS as a new paradigm for the spin MOSFET concept.

preprint2016arXivOpen access
Patrizio Graziosi
cond-mat.mtrl-sci
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Patrizio Graziosi

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