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Properties of Two-Dimensional Silicon grown on Graphene Substrate

The structure and electrical properties of a two-dimensional (2D) sheet of silicon on a graphene substrate are studied using first-principles calculations. A new corrugated rectangular structure of silicon is proposed to be the most energetically favorable structure. The shifting of the Fermi energy level indicates self-doping. Calculation of electron density shows a weak coupling between the silicon layer and graphene substrate. The 2D silicon sheet turns to be metallic and has a much higher value of transmission efficiency (TE) than the underlying graphene substrate.

preprint2013arXivOpen access
Ruiping ZhouLok C. Lew Yan VoonYan Zhuang
cond-mat.mes-hall
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Open access3 authors1 topic
Imported metadata coverageMissing code, dataset, citation and institution fields are tracked without dominating the paper.Details
Citations: 0Reviews: 0Saves: 0Code: not linkedDataset: not linkedInstitutions: 0

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Ruiping ZhouLok C. Lew Yan VoonYan Zhuang

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