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Planar graphene tunnel field-effect transistor

We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room temperature.

preprint2014arXivOpen access
V. L. KatkovV. A. Osipov
cond-mat.mes-hall
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Open access2 authors1 topic
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V. L. KatkovV. A. Osipov

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