Abstract
We study the Cu-O valence instability (VI) and the related phase separation (PS) driven by Cu-O nearest-neighbor repulsion , using an effective extended one-band Hubbard model () obtained from the extended three-bandHubbard model, through an appropriate low-energy reduction. is solved by exact diagonalization of a square cluster with 10 unit cells and also within a slave-boson mean-field theory. Its parameters depend on doping for or on-site O repulsion . The results using both techniques coincide in that there is neither VI nor PS for doping levels if eV. The PS region begins for eV at large doping and increases with increasing . The PS also increases with increasing on-site Cu repulsion .
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