Abstract
The transferred-electron oscillator (TEO) is a device used in microwave applications that utilizes the negative differential mobility (NDM) effect to generate continuous oscillations. Recently, NDM was observed in intrinsic single-crystalline chemical vapor deposition (SC-CVD) diamond. The occurrence was explained by the electron repopulation between its different conduction band valleys. This paper presents the results of constructing a diamond TEO based on the NDM effect. A series of experiments has been performed for varying voltages, temperatures and resonator parameters on three SC-CVD diamond samples of different thicknesses. For the temperature range 90-300 K, we observe transferred-electron oscillations in diamond.
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