Abstract
A seed layer-free growth of HfO on commercially available CVD graphene from various suppliers is investigated. It is revealed that the samples of monolayer graphene transferred from Cu to SiO/Si substrates have different coverage with bi- and multi-layer graphene islands. We find that the distribution and number of such islands impact the nucleation and growth of HfO by CVD. In particular, we show that the edges and surface of densely distributed bi-layer graphene islands provide good nucleation sites for conformal CVD HfO layers. Dielectric constant of 16 is extracted from measurements on graphene- HfO-TiN capacitors.
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