Abstract
We study the spatio-temporal pattern of the near-field intensity correlations generated by parametric scattering processes in a planar optical cavity. A generalized Bogolubov-de Gennes model is used to compute the second order field correlation function. Analytic approximations are developed to understand the numerical results in the different regimes. The correlation pattern is found to be robust against a realistic disorder for state-of-the-art semiconductor systems.
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