Abstract
We propose a simple model which accounts for the major features and systematics of experiments on the -axis resistivity, , for $\lsco$, $\ybco$ and $\bsco $. We argue that the -axis resistivity can be separated into contributions from in-plane dephasing and the -axis ``barrier'' scattering processes, with the low temperature semiconductor-like behavior of arising from the suppression of the in-plane density of states measured by in-plane magnetic Knight shift experiments. We report on predictions for in impurity-doped $\ybco$ materials.
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