Metal-insulator transition in 2D: Anderson localization by temperature-dependent disorder?

preprint1999arXivOpen access

Abstract

A generalization of the single-parameter scaling theory of localization is proposed for the case when the random potential depends on temperature. The scaling equation describing the behavior of the resistance is derived. It is shown that the competition between the metallic-like temperature dependence of the Drude resistivity and localization leads to a maximum (minimum) at higher (lower) temperatures. An illustration of a metal-insulator transition in the model of charged traps, whose concentration depends on temperature, is presented.

Explore this paper’s authors, topics and related work.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Reviews 0

Write a reviewWrite

No reviews yet.

Discussion 0

Add a commentWrite

No comments yet.