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Medium Energy Ion Scattering of Gr on SiC(0001) and Si(100)

Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC, but by use of isotope labeling it is possible to tag graphene generated from reacted ethylene. Furthermore, we are able to analyze graphene supported by oxidized Si(100) substrates, allowing the study of graphene films grown by chemical vapor deposition on metal and transfered to silicon. This introduces a powerful method to explore the fundamentals of graphene formation.

preprint2011arXivOpen access
M. CopelS. OidaA. KasryA. A. BolJ. B. HannonR. M. Tromp
cond-mat.mtrl-sci
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Open access6 authors1 topic
Imported metadata coverageMissing code, dataset, citation and institution fields are tracked without dominating the paper.Details
Citations: 0Reviews: 0Saves: 0Code: not linkedDataset: not linkedInstitutions: 0

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M. CopelS. OidaA. KasryA. A. BolJ. B. HannonR. M. Tromp

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