Abstract
Spin accumulation is generated by injecting an unpolarized charge current into a channel of GaAs two-dimensional electron gas subject to an in-plane magnetic field, then measured in a non-local geometry. Unlike previous measurements that have used spin-polarized nanostructures, here the spin accumulation arises simply from the difference in bulk conductivities for spin-up and spin-down carriers. Comparison to a diffusive model that includes spin subband splitting in magnetic field suggests a significantly enhanced electron spin susceptibility in the 2D electron gas.
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