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Paper detail

Magnetization Dissipation in the Ferromagnetic Semiconductor (Ga,Mn)As

We compute the Gilbert damping in (Ga,Mn)As based on the scattering theory of magnetization relaxation. The disorder scattering is included non-perturbatively. In the clean limit, the spin-pumping from the localized d-electrons to the itinerant holes dominates the relaxation processes. In the diffusive regime, the breathing Fermi-surface effect is balanced by the effects of interband scattering, which cause the Gilbert damping constant to saturate at around 0.005. In small samples, the system shape induces a large anisotropy in the Gilbert damping.

preprint2011arXivOpen access
Kjetil M. D. HalsArne Brataas
cond-mat.mes-hallcond-mat.mtrl-sci
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Kjetil M. D. HalsArne Brataas

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