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Paper detail

Inverse problems for semiconductors: models and methods

We consider the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by different models connected to the voltage-current map. Stationary as well as transient settings are discussed and a framework for the corresponding inverse problems is established. Numerical implementations for the so-called stationary unipolar and stationary bipolar cases show the effectiveness of a level set approach to tackle the inverse problem.

preprint2020arXivOpen access
A. LeitaoP. A. MarkowichJ. P. Zubelli
Computational Engineering, Finance, and Sciencemath.NANumerical Analysis
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A. LeitaoP. A. MarkowichJ. P. Zubelli

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