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Infrared spectroscopy of hole doped ABA-stacked trilayer graphene

Using infrared spectroscopy, we investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. We find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows us to determine the charge densities and the potentials of the π-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher energy bands.

preprint2012arXivOpen access
N. UbrigP. BlakeD. van der MarelA. B. Kuzmenko
cond-mat.mes-hall
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Open access4 authors1 topic
Imported metadata coverageMissing code, dataset, citation and institution fields are tracked without dominating the paper.Details
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N. UbrigP. BlakeD. van der MarelA. B. Kuzmenko

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