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Influence of homo-buffer layer on stress control of sputtered (Ba0.45,Sr0.55)TiO3 thin films on Pt-Si

To engineer strain relaxation of sputtered BST thin films on Pt-Si wafers, homo-buffer layer method was applied to eliminate Pt hillock formation. Thin BST homo-buffer layers were deposited at room temperature and subsequently the main BST layer was deposited at 650°C, Pt hillock free BST films were obtained with homo-buffer thickness above 5 nm. Relatively good electrical properties were obtained for BST thin films with 15 and 25 nm homo-buffer layer (T= 30 % at 5V and tan δ= 0.018).

preprint2013arXivOpen access
Y. K. Vayunandana ReddyGuillaume GueganMohamed LamhamdiVirginie GrimalPatrick Simon
cond-mat.mtrl-sci
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Y. K. Vayunandana ReddyGuillaume GueganMohamed LamhamdiVirginie GrimalPatrick Simon

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