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III-nitride based quantum dots for photon emission with controlled polarization switching

Computational studies based on 6 band k$\cdot$p theory are employed on lens-shaped III-nitride quantum dots (QDs) with focus on the polarization properties of the optical interband transitions. The results predict pronounced linear polarization of the ground-state related transitions for asymmetric QDs of a material with small split-off energy. It is demonstrated that a moderate externally applied electric field can be used to induce a linear polarization and to control its direction. InN is found to be the most efficient choice for dynamic polarization switching controlled by an electric field, with potential for polarization control on a photon-by-photon level.