High Temperature Electron Localization in dense He Gas

preprint2001arXivOpen access

Abstract

We report new accurate mesasurements of the mobility of excess electrons in high density Helium gas in extended ranges of temperature [(26≤T≤77)K][(26\leq T\leq 77) K ] and density [(0.05≤N≤12.0)atoms⋅nm−3][ (0.05\leq N\leq 12.0) {atoms} \cdot {nm}^{-3}] to ascertain the effect of temperature on the formation and dynamics of localized electron states. The main result of the experiment is that the formation of localized states essentially depends on the relative balance of fluid dilation energy, repulsive electron-atom interaction energy, and thermal energy. As a consequence, the onset of localization depends on the medium disorder through gas temperature and density. It appears that the transition from delocalized to localized states shifts to larger densities as the temperature is increased. This behavior can be understood in terms of a simple model of electron self-trapping in a spherically symmetric square well.

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