Abstract
Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulses to two-terminal samples. The dependence of electron drift velocity on electron density ranging from 1.4210 cm to 1.310 cm at a given electric field is deduced after estimation of the sample contact resistance and the Hall electron mobility. Manifestation of the highest electron drift velocity up to 1.510 cm/s is estimated for electron density of 1.4210 cm and is in agreement with Monte Carlo simulation when hot-phonon lifetime is below 1 ps. A local drift velocity maximum is observed at 1.110 cm and is in agreement with ultra-fast hot phonon decay.
Connections
Explore this paper’s authors, topics and related work.
Building this map preview
BZPEER is loading the nearby papers, people, topics and institutions for this page.
Reviews 0
Write a review
No reviews yet.
Discussion 0
Add a comment
No comments yet.