Generation and detection of non-Abelian matrix Berry phases through manipulation of electric confinement potential of a semiconductor quantum dot

A matrix Berry phase can be generated and detected by {\it all electric means} in II-VI or III-V n-type semiconductor quantum dots by changing the shape of the confinement potential. This follows from general symmetry considerations in the presence of spin-orbit coupling terms. The resulting 2 x 2 matrix Berry phase can be characterized by two numbers of geometric origin. We investigate how these parameters depend on the shape and area of closed adiabatic paths. We suggest how the matrix Berry phase may be detected in transport measurements.

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