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Fabrication of Nb/Al2O3/Nb Josephson Junctions using in situ Magnetron Sputtering and Atomic Layer Deposition

Atomic layer deposition (ALD) provides a promising approach for deposition of ultrathin low-defect-density tunnel barriers, and it has been implemented in a high-vacuum magnetron sputtering system for in situ deposition of ALD-Al2O3 tunnel barriers in superconductor-insulator-superconductor (SIS) Josephson junctions. A smooth ALD-Al2O3 barrier layer was grown on a Al-wetted Nb bottom electrode and was followed with a top Nb electrode growth using sputtering. Preliminary low temperature measurements of current-voltage characteristics (IVC) of the Josephson junctions made from these trilayers confirmed the integrity of the ALD-Al2O3 barrier layer. However, the IcRN product of the junctions is much smaller than the value expected from the Ambegaokar-Baratoff formula suggesting a significant pair-breaking mechanism at the interfaces.

preprint2013arXivOpen access
Rongtao LuAlan J. ElliotLogan WilleBo MaoSiyuan HanJudy Z. WuJohn TalvacchioHeidi M. SchulzeRupert M. LewisDaniel J. EwingH. F. YuG. M. XueS. P. Zhao
cond-mat.mtrl-sci
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Open access13 authors1 topic
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Rongtao LuAlan J. ElliotLogan WilleBo MaoSiyuan HanJudy Z. WuJohn TalvacchioHeidi M. SchulzeRupert M. LewisDaniel J. EwingH. F. YuG. M. XueS. P. Zhao

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