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Paper detail

Epitaxial aluminum contacts to InAs nanowires

We report a method for making epitaxial superconducting contacts to semiconducting nanowires. The temperature and gate characteristics demonstrate barrier-free electrical contact, and the properties in the superconducting state are investigated at low temperature. Half-covering aluminum contacts are realized without the need of lithography and we demonstrate how to controllably insert high-band gap layers in the interface region. These developments are relevant to hybrid superconductor-nanowire devices that support Majorana zero energy states.

preprint2013arXivOpen access
N. L. B. ZiinoP. KrogstrupM. H. MadsenE. JohnsonJ. B. WagnerC. M. MarcusJ. NygårdT. S. Jespersen
cond-mat.mes-hallcond-mat.supr-concond-mat.mtrl-sci
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Open access8 authors3 topics
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N. L. B. ZiinoP. KrogstrupM. H. MadsenE. JohnsonJ. B. WagnerC. M. MarcusJ. NygårdT. S. Jespersen

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