Abstract
The dispersed fluorescence following pulsed dye laser excitation of the band of a cold sample of SiO has been recorded and analyzed. The branching ratios for and emission were determined and compared with values predicted based upon existing experimental and theoretical data. The experimentally determined branching ratios show that the transitions are somewhat less diagonal than predicted. The implications for laser cooling of a trapped sample of SiO using broadband laser excitation are discussed.
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