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Electrical Measurement of the Direct Spin Hall Effect in Fe/In_xGa_{1-x}As Heterostructures

We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the In_{x}Ga_{1-x}As is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the Hall voltage measured by pairs of ferromagnetic contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.

preprint2010arXivOpen access
E. S. GarlidQ. O. HuM. K. ChanC. J. PalmstromP. A. Crowell
cond-mat.mes-hall
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E. S. GarlidQ. O. HuM. K. ChanC. J. PalmstromP. A. Crowell

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